ENP70S03|30V N-Channel Enhancement Mode MOSFET

ENP70S03|30V N-Channel Enhancement Mode MOSFET

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General Description

The ENP70S03 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous rectification.

General Features

  • VDS =30V ID =70A
    RDS(ON)(Typ.)= 4.4mΩ     @VGS =10V
    RDS(ON)(Typ.)= 6.5mΩ     @VGS
  • Very low on-resistance R =4.5V
  • 150 °C operating temperature DS(on)
  • 100% UIS tested

Application

  • Synchronus Rectification in DC/DC and AC/DC Converters
  • Industrial and Motor Drive applications

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The Rules Are Rigid, The Design Is Alive
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The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

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