ECF8205｜Dual N-Channel Enhancement Mode Power MOSFET

ECF8205｜Dual N-Channel Enhancement Mode Power MOSFET

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Features

1.1 Low on-resistance
1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A)
1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A)

Applications

Li-ion battery management applications

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