ENP4836|30V Dual N-Channel Enhancement Mode MOSFET

ENP4836|30V Dual N-Channel Enhancement Mode MOSFET

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General Description

The ENP4836 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.

General Features

  • VDS=30V, ID =8A
    RDS(ON)=15.5mΩ (typical)       @ VGS=10V
    RDS(ON)=19.2mΩ (typical)      @ VGS=4.5V
  • Excellent gate charge x RDS(ON) product (FOM)
  • Very low on-resistance RDS(ON)  
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested

Application

  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification

Package

  • SOP-8

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我们提供具有灵活弹性的客制化IC与模组设计

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