EFM93C46A/56A/66A|Three-wire Serial EEPROM

EFM93C46A/56A/66A|Three-wire Serial EEPROM

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General Description

EFM93C46A/56A/66A provides 1k/2k/4k bits of serial electrically erasable programmable read-only memory (EEPROM), organized as 64/128/256 words of 16 bits each (when the ORG pin is connected to VCC), and 128/256/512 words of 8 bits each (when the ORG pin is connected to ground).
The EFM93C46A/56A/66A is enabled through the Chip Select pin (CS) and accessed via a three-wire serial interface consisting of Data Input (DI), Data Output (DO), and Serial Clock (SK). Upon receiving a read instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO. The write cycle is completely self timed and no separate erase cycle is required before write. The write cycle is only enabled when the part is in the Erase/Write Enable State. When CS is brought “high” following the initiation of a write cycle,
The DO pin outputs the Ready/Busy status of the part. The device is the best choice for use in many industrial and commercial applications where low-power and low voltage operations are essential.

Features

  • Three-wire Serial Interface
  • Low-voltage and Standard-voltage Operation 1.7V~5.5V
  • 2MHz (2.5V) and 1MHz (1.7V) Compatibility
  • Dual organization: by word (x16) or byte (x8)
  • Sequential read operation
  • Programming instructions that work on: byte, word or entire memory
  • Self-timed Write Cycle (5 ms max)
  • READY/Busy signal during programming
  • High Reliability
    -Endurance: 1 Million Write Cycles
    -Data Retention: 40 Years
  • PDIP8, SOP8, TSSOP8, TDFN8, TSOT23-6L Packages (RoHS Compliant and Halogen-free)

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我们提供具有灵活弹性的客制化IC与模组设计

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