ENP60N03|30V N-Channel MOS

ENP60N03|30V N-Channel MOS

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General Description

The ENP60N03 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

  • VDS =30V,ID =60A            RDS(ON)(Typ.)=4 mΩ  @VGS=10V          RDS(ON)(Typ.)=6.3 mΩ  @VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

Applications

  • High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • Networking DC-DC Power System
  • Load switch

Package

  • DFN3×3-8L


規格書下載

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我们提供具有灵活弹性的客制化IC与模组设计

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规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!

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