General Description

The ENP35N04 uses Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance.
Both conduction andswitching power losses are minimized due to anextremely low combination of R_DS(ON) and Qg.
This deviceis ideal for high-frequency switching and synchronous rectification.

• V_DS =40V，I_D =35A           R_DS(ON)=7.9mΩ (typical) @ V_GS=10V   R_DS(ON)=10.2mΩ (typical) @ V_GS=4.5V
• Excellent gate charge x R_DS(ON) product(FOM)
• Very low on-resistance R_DS(ON)
• 150 °C operating temperature
• Pb-free lead plating
• 100% UIS tested

Applications

• DC/DC Converter
• Ideal for high-frequency switching and synchronous rectification

Package

• DFN3*3-8L