ENP4826|60V Dual N-Channel Enhancement Mode MOSFET

ENP4826|60V Dual N-Channel Enhancement Mode MOSFET

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General Description

The ENP4826 uses advanced trench technology to provide excellent RDS(on) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.

General Features

  • VDS= 60V, ID= 6A
    RDS(ON)= 19mΩ (typical)  @VGS= 10V
    RDS(ON)= 22mΩ (typical)  @ VGS=4.5V
  • Excellent gate charge xRDS(ON) product (F OM)
  • Very low on-resistance RDS(ON)
  • 150 °C operating temperature
  • Pb-free lead plating

Application

  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification

Package

  • SOP-8

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